Coincidence of reciprocal lattice planes model for quasicrystal-crystal epitaxy
نویسنده
چکیده
A coincidence of reciprocal lattice planes model was developed to calculate the interfacial energy in quasicrystal-crystal epitaxy. This model allows a quantitative description of the interface as opposed to previously employed qualitative models that consider symmetry relations and alignment of rotation axes. Computations were carried out on several types of quasicrystal-crystal systems, namely, the crystalline structures on various surfaces of single quasicrystals ~Al-Cu-Fe, Al-Ni-Co, and Al-Cu-Co! caused by ion bombardment, the crystalline thin films grown on quasicrystal substrates, and the quasicrystalline thin films grown on crystalline substrates. This model can also be extended to include quasicrystal-quasicrystal epitaxy.
منابع مشابه
A multigrid approach to the average lattices of quasicrystals.
An average structure associated with a given quasilattice is a system composed of several average lattices that in reciprocal space produces strong main reflections. The average lattice of a quasicrystal is a useful concept closely related to the geometric description of the quasicrystal to crystal transformation and has been proved to be structurally significant. Here we calculate average stru...
متن کاملFeasibility of fast-particle channeling in quasicrystals.
The feasibility of ion channeling in quasicrystalline structures is investigated in a computer experiment. For this purpose, a quasilattice is constructed by the grid method. As this model crystal shows, also in a quasicrystal the lattice points are arranged in strings and planes and form pronounced axial and planar channels. Their occupation by lattice points is, however, not constant, but exh...
متن کاملReciprocal Space Mapping and Reflectivity Investigations of Epi-Ready InP Substrate
InP single crystals are used to the growth of three-component epitaxial layers and superlattices. Triple crystal X-ray diffractometry and reflectometry have been used to determine defects in InP epi-ready wafers caused by the mechanical treatment. Reciprocal space maps around 400 lattice points were separately made for mechanically polished wafers before and after etching treatment. The lattice...
متن کاملHigh-Quality Epitaxy of Ruthenium Dioxide, RuO2, on Rutile Titanium Dioxide, TiO2, by Pulsed Chemical Vapor Deposition
Pulsed chemical vapor deposition was used to prepare epitaxial ruthenium dioxide (RuO2) film on rutile TiO2 (011) at low temperature 280 °C. Reciprocal space mapping by high-resolution X-ray diffraction was used to examine the quality of epitaxy, which demonstrated a high quality epitaxy of the deposited RuO2 film. The results also showed that the RuO2 lattice was fully strained by the substrat...
متن کاملColourings of lattices and coincidence site lattices Manuel
The relationship between the coincidence indices of a lattice Γ1 and a sublattice Γ2 of Γ1 is examined via the colouring of Γ1 that is obtained by assigning a unique colour to each coset of Γ2. In addition, the idea of colour symmetry, originally defined for symmetries of lattices, is extended to coincidence isometries of lattices. An example involving the Ammann-Beenker tiling is provided to i...
متن کامل